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PD-96958 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) Product Summary Part Number Radiation Level RDS(on) ID IRHMS67164 100K Rads (Si) 0.019 45A* IRHMS63164 300K Rads (Si) 0.019 45A* IRHMS67164 150V, N-CHANNEL TECHNOLOGY International Rectifier's R6TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today's high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters. Low-Ohmic TO-254AA Features: n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page 45* 44 180 208 1.67 20 353 45 20.8 8.2 -55 to 150 Pre-Irradiation Units A W W/C V mJ A mJ V/ns o C g 300 (0.063 in. /1.6 mm from case for 10s) 9.3 (Typical) www.irf.com 1 12/22/05 IRHMS67164 Pre-Irradiation Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 150 -- -- 2.0 49 -- -- -- -- -- -- -- -- -- -- -- -- Typ Max Units -- 0.18 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.019 4.0 -- 10 25 100 -100 230 55 90 35 120 85 25 -- V V/C V S( ) A Test Conditions VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 44A A VDS = VGS, ID = 1.0mA VDS = 15V, IDS = 44A A VDS = 120V ,VGS = 0V VDS = 120V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 45A VDS = 75V VDD = 75V, ID = 45A VGS =12V, RG = 2.35 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance -- -- -- -- 7380 1140 28 0.52 -- -- -- -- pF VGS = 0V, VDS = 25V f = 1.0MHz f = 1.0MHz, open drain Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units -- -- -- -- -- -- -- -- -- -- 45* 180 1.2 370 3.8 Test Conditions A V ns C Tj = 25C, IS = 45A, VGS = 0V A Tj = 25C, IF = 45A, di/dt 100A/s VDD 50V A Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient Min Typ Max Units -- -- -- -- 0.60 0.21 -- -- 48 C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHMS67164 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Sourcee On-State Resistance (Low Ohmic TO-254AA) Diode Forward Voltage Up to 300K Rads (Si) Min 150 2.0 -- -- -- -- -- -- Max Units V nA A V Test Conditions VGS = 0V, ID = 1.0mA V GS = VDS, ID = 1.0mA VGS = 20V VGS = -20V VDS= 120V, VGS= 0V VGS = 12V, ID = 44A VGS = 12V, ID = 44A VGS = 0V, ID = 45A -- 4.0 100 -100 10 0.019 0.019 1.2 Part numbers IRHMS67164 and IRHMS63164 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Tables. Tables for Single Event Effect Safe Operating Area Ion Kr LET = 39 MeV/(mg/cm2) Energy = 312 MeV Range = 39 m VGS Bias VDS Bias (Volts) (Volts) 0 150 -5 150 -10 150 -15 150 -20 150 Ion Xe LET = 59 MeV/(mg/cm2) Energy = 825 MeV Range = 66 m VGS Bias VDS Bias (Volts) (Volts) 0 150 -5 150 -9 150 -10 140 -11 50 -15 40 180 150 120 VDS 90 60 30 0 0 -5 -10 VGS -15 -20 Kr Xe Au Ion Au LET = 90 MeV/(mg/cm2) Energy = 1480 MeV Range = 80 m VGS Bias VDS Bias (Volts) (Volts) 0 50 -5 50 -10 30 Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHMS67164 Pre-Irradiation 1000 ID, Drain-to-Source Current (A) 100 ID, Drain-to-Source Current (A) VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 1000 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 100 5.0V 10 10 5.0V 60s PULSE WIDTH Tj = 25C 1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 60s PULSE WIDTH Tj = 150C 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 RDS(on) , Drain-to-Source On Resistance 3.0 ID = 45A 2.5 ID, Drain-to-Source Current (A) 100 T J = 150C 2.0 T J = 25C 10 (Normalized) 1.5 1.0 1 5 5.5 6 VDS = 50V 15 60s PULSE WIDTH 6.5 7 7.5 8 0.5 VGS = 12V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHMS67164 14000 12000 10000 8000 6000 4000 2000 0 1 VGS, Gate-to-Source Voltage (V) 100KHz VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 20 ID = 45A 16 VDS = 120V VDS = 75V VDS = 30V C, Capacitance (pF) Ciss 12 Coss 8 Crss 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 40 80 120 160 200 240 280 10 100 VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100s 10 1ms 100 T J = 150C T J = 25C 10 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1 Tc = 25C Tj = 150C Single Pulse 1 10 100 10ms VGS = 0V 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VSD , Source-to-Drain Voltage (V) 0.1 1000 VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHMS67164 Pre-Irradiation 70 LIMITED BY PACKAGE 60 VDS VGS RG RD D.U.T. + ID , Drain Current (A) 50 40 30 20 10 0 -V DD VGS Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit VDS 90% 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 1 D = 0.50 Thermal Response ( Z thJC ) 0.1 0.20 0.10 0.05 0.01 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) P DM t1 t2 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHMS67164 700 EAS , Single Pulse Avalanche Energy (mJ) 15V 600 500 400 300 200 100 0 25 50 75 TOP BOTTOM VDS L DRIVER ID 20A 28.5A 45A RG D.U.T. IAS tp + - VDD A VGS 20V 0.01 Fig 12a. Unclamped Inductive Test Circuit 100 125 150 V(BR)DSS tp Starting T J , Junction Temperature (C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 12 V QGS QGD VGS 3mA D.U.T. + V - DS VG Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 IRHMS67164 Pre-Irradiation A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias. Footnotes: A Repetitive Rating; Pulse width limited by maximum junction temperature. A VDD = 25V, starting TJ = 25C, L= 0.35 mH Peak IL = 45A, VGS =12V A ISD 45A, di/dt 940A/s, VDD 150V, TJ 150C 12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 120 volt V DS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions -- Low-Ohmic TO-254AA 3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 0.12 [.005] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040] 17.40 [.685] 16.89 [.665] 1 2 3 20.32 [.800] 20.07 [.790] 13.84 [.545] 13.59 [.535] B C 14.48 [.570] 12.95 [.510] 0.84 [.033] MAX. 3X 3.81 [.150] 2X 1.14 [.045] 0.89 [.035] 0.36 [.014] BA 3.81 [.150] NOT ES: 1. 2. 3. 4. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. CONTROLLING DIMENSION: INCH. CONFORMS TO JEDEC OUTLINE TO-254AA. PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/2005 8 www.irf.com |
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